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Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors
【文件类型】 【消费金额】2.1 【文章页数】7 【会员操作】  
【文章作者】Xia, Wenwen;Xia, Guodong;Tu, Guangsheng;Dong, Xin;Wang, Sumei;Liu, Rui
【文章摘要】      High-k oxide dielectric films have attracted intense interest for thin-film transistors (TFTs). However, high quality oxide dielectrics were traditionally prepared by vacuum routes. Here, amorphous high-k alumina (Al2O3) thin films were prepared by the simple sol-gel spin-coating and post-annealing process. The microstructure and dielectric properties of Al2O3 dielectric films were systematically investigated. All the Al2O3 thin films annealed at 300-600 degrees C are in amorphous state with ultrasmooth surface (RMS similar to 0.2 nm) and high transparency (above 95%) in the visible range. The leakage current of Al2O3 films gradually decreases with the increase of annealing temperature. Al2O3 thin films annealed at 600 degrees C showed the low leakage current density down to 3.9 x 10(-7) A/cm(2) at 3 MV/cm. With the increase of annealing temperature, the capacitance first decreases then increases to 101.1 nF/cm(2) (at 600 degrees C). The obtained k values of Al2O3 films are up to 8.2. The achieved dielectric properties of Al2O3 thin films are highly comparable with that by vapor and solution methods. Moreover, the fully solution processed InZnO TFTs with Al2O3 dielectric layer exhibit high mobility of 7.23 cm(2) V-1 s(-1) at the low operating voltage of 3 V, which is much superior to that on SiO2 dielectrics with mobility of 1.22 cm(2)/V-1 s(-1) at the operating voltage of 40 V. These results demonstrate that solution-processed Al2O3 thin films are promising for low-power and high-performance oxide devices.
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【卷】44【ISSUE】8【ISSUEID】815C0073    【文章期份】2018    【发布日期】2018/8/28 16:26:45    点击率:0    打印    关闭
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