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Aluminum‐vacancy‐related dielectric relaxations in AlN ceramics
【文件类型】 【消费金额】2.4 【文章页数】8 【会员操作】  
【文章作者】Wang Kang;Wang Chunchang
【文章摘要】      Abstract

The dielectric properties of AlN ceramics were investigated comprehensively in the temperature range from room‐temperature to 950?K and frequency range of 102to 5?×?106?Hz. The sample exhibits intrinsic dielectric behavior whenT?<?500?K, showing a flat dielectric permittivity about 10 and an extremely low dielectric loss factor (tanδ?<?2?×?10?3). In the temperature above 500?K, two thermally activated dielectric relaxations related to bulk and interfacial effects were observed. Both relaxations strongly depend on the concentration of oxygen atoms. Our results indicate that the bulk relaxation, occurring in lower temperature range, is caused by aluminum vacancy hopping motion inside grains. The interfacial relaxation, occurring in higher temperature range, is caused by surface‐layer effect due to aluminum vacancies being blocked by sample‐electrode contact.

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【卷】101【ISSUE】5【ISSUEID】815B0005    【文章期份】2018    【发布日期】2018/8/28 16:26:36    点击率:0    打印    关闭
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